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| BFU520Y_15 Datasheet, PDF (1/20 Pages) NXP Semiconductors – Dual NPN wideband silicon RF transistor | |||
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BFU520Y
Dual NPN wideband silicon RF transistor
Rev. 1 â 20 February 2014
Product data sheet
1. Product profile
1.1 General description
Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin
SOT363 package.
The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
ï® Low noise, high breakdown RF transistor
ï® AEC-Q101 qualified
ï® Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
ï® Maximum stable gain 19 dB at 900 MHz
ï® 11 GHz fT silicon technology
1.3 Applications
ï® Applications requiring high supply voltages and high breakdown voltages
ï® Broadband differential amplifiers up to 2 GHz
ï® Low noise amplifiers for ISM applications
ï® ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 ï°C unless otherwise specified
Symbol Parameter
Conditions
VCB
collector-base voltage
open emitter
VCE
collector-emitter voltage open base
shorted base
VEB
emitter-base voltage
open collector
IC
collector current
Ptot
total power dissipation
Tsp ï£ 87 ï°C
hFE
DC current gain
IC = 5 mA; VCE = 8 V
Cc
collector capacitance
VCB = 8 V; f = 1 MHz
fT
transition frequency
IC = 10 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 5 30 mA
[1] -
-
450 mW
60 95 200
- 0.48 -
pF
- 10 -
GHz
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