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| BFU520Y_15 Datasheet, PDF (3/20 Pages) NXP Semiconductors – Dual NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU520Y
Dual NPN wideband silicon RF transistor
5. Design support
Table 5. Available design support
Download from the BFU520Y product information page on http://www.nxp.com.
Support item
Available
Remarks
Device models for Agilent EEsof EDA ADS yes
Based on Mextram device model.
SPICE model
yes
Based on Gummel-Poon device
model.
S-parameters
yes
Noise parameters
yes
Solder pattern
yes
6. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCB
collector-base voltage
VCE
collector-emitter voltage
open emitter
open base
shorted base
VEB
IC
Tstg
VESD
emitter-base voltage
collector current
storage temperature
electrostatic discharge voltage
open collector
Human Body Model (HBM) According to JEDEC
standard 22-A114E
Charged Device Model (CDM) According to
JEDEC standard 22-C101B
7. Recommended operating conditions
Min Max Unit
- 30 V
- 16 V
- 30 V
-3
V
- 50 mA
ï65 +150 ï°C
- ï±150 V
- ï±2 kV
Table 7.
Symbol
VCB
VCE
Characteristics
Parameter
collector-base voltage
collector-emitter voltage
VEB
emitter-base voltage
IC
collector current
Pi
input power
Tj
junction temperature
Ptot
total power dissipation
Conditions
open emitter
open base
shorted base
open collector
ZS = 50 ï
Tsp ï£ 87 ï°C
[1] Tsp is the temperature at the solder point of the collector lead.
Min Typ Max Unit
-
-
24
V
-
-
12
V
-
-
24
V
-
-
2
V
-
-
30
mA
-
-
10
dBm
ï40 -
+150 ï°C
[1] -
-
450 mW
BFU520Y
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 20 February 2014
© NXP B.V. 2014. All rights reserved.
3 of 20
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