TDA5360 Datasheet, PDF (4/34 Pages) NXP Semiconductors – Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads

Philips Semiconductors
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
Objective Specification, Revision 2.2
TDA5360
3 QUICK REFERENCE DATA
SYMBOL
V_CC
V_EE
NF
IRNV
Avd
f_HR
CMR
PSR
t_r, t_f
I_MR(PR)
I_WR(b-p)
f_sclk
PARAMETER
DC Supply voltage
CONDITIONS
Noise Figure
Note 3, Section 14
Input Referred Noise
Voltage
Rmr=66Ω; Imr=8mA;
10 MHz<f<100 MHz
Differential gain
V_IN=1mVpp @ 20 MHz,
R_Loaddif=330Ω, Imr=8mA,
Rmr=66Ω,
GAIN0=0, GAIN1=1;
-3dB frequency bandwidth
Rmr=66Ω, Lmr=30 nH
-3dB: without Boost SAL
GMR
Common Mode Rejection
Imr=8 mA, Rmr=66Ω,
10MHz<f<200MHz
1 MHz<f< 10 MHz
f<100 kHz, 1mV input signal
Power Supply Rejection
200mVpp on Vcc or Vee,
Imr=8mA, Rmr=66Ω,
10MHz<f<200MHz
1 MHz<f<10 MHz
f < 100 kHz
Write Current Rise/Fall times Iwr=50 mA; f=20 MHz;
(-0.8 * Iwr => +0.8 * Iwr) L_H=75nH, R_H=10Ω
Programming MR bias
current range
SAL
GMR (see note section 10)
Programming Write current Rext = 10 kΩ
range (base-to-peak)
Serial interface clock rate
MIN.
+4.5
-4.5
225
225
4
3
10
TYP.
+5
-5
1.7
0.8
50
MAX.
+5.5
-5.5
1.7
UNIT
V
V
dB
nV/
sqrtHz
dB
MHz
MHz
20
dB
40
dB
60
dB
20
dB
40
dB
60
dB
0.84
ns
10.2
mA
6 .1
mA
50.3
mA
40
MHz
1998 July 30
4