TDA5360 Datasheet, PDF (27/34 Pages) NXP Semiconductors – Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads

Philips Semiconductors
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
Objective Specification, Revision 2.2
TDA5360
VCCTL
VEETL
Voltage compliance for WDP
and WDN in current mode
VCC Fault Threshold
VEE Fault Threshold
CMM of the inputs
1.5
in current mode
Hysteresis=100mV +/- 10% 3.80
Hysteresis=100mV +/- 10% -4.20
Vcc -1.7 V
4.00 4.20
V
-4.00 -3.80
V
12.2 Read Characteristics
Unless otherwise specified, recommended operating conditions apply.
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
IMR
MR Current Range
SAL
GMR
4
8
10.2 mA
3
6
Pwr
MR Power Range
SAL
GMR
(Note 3)
1.500 4.2 9.25 mW
0.375 1
2.30 mW
MR Power Tolerance
3 < IMR < 10mA
-5
+5 %
MR Bias Current Overshoot
0
%
RMR Digitizer Accuracy
5
%
VRext
Rext Reference Voltage
1.31
V
AVd
Differential Voltage Gain
VIN = 1mVPP @ 20MHz,
RLoaddif = 330 Ohm,IMR=8mA,
48
RMR = 66 Ohm,
RIN = 18 Ohm,
GAIN0=0, GAIN1=1,GMR=0
50 52 dB
fHR
Passband Upper -3dB
Frequency
RMR = 66Ω;LMR=30nH
- 3dB. Without boost.
225
MHz
fLR
IRNV
NF
Passband Lower -3dB
Frequency
Input referenced noise voltage
(including MR bias current noise,
excluding Rmr noise)
RMR = 66Ω; LMR = 30nH;
LPF0=0
LPF1=1
RMR = 66Ω; IMR=8mA
10 MHz<f<100 MHz, GMR=0
(Note 4)
MR bias current noise
Noise figure
HF noise +3dB frequency
LF noise +3dB frequency
IMR=8mA 10 MHz<f<100MHz
IMR=5mA 10 MHz<f<130MHz
(Note 5)
Preamp noise=head noise
Preamp noise=head noise
3
MHz
0.8
nV/
÷sqrt
Hz
8
pA/
5.7
sqrt÷
Hz
1.7
dB
350
MHz
3
MHz
1998 July 30
27