TDA5360 Datasheet, PDF (30/34 Pages) NXP Semiconductors – Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads

Philips Semiconductors
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
Objective Specification, Revision 2.2
TDA5360
12.4 Switching Characteristics
Unless otherwise specified, recommended operating conditions apply
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
SI
Serial Interface timing
(Note 6)
tRW
R/WN to Write Mode
To 90% of write current
50
ns
SEN to Write Mode
To 90% of write current
50
ns
tWR
R/WN to Read Mode
Reader outputs loaded with high-
pass single ended filters :
175
ns
R=165Ω, C=270pF
Writer output shorted
(Note 7)
tCS
CS to Read Mode
Reader outputs loaded with high-
pass single ended filters :
R=165Ω, C=270pF
1
us
tHS
Head Switching
Reader outputs loaded with high-
pass single ended filters :
R=165Ω, C=270pF
1
us
tRI
CS to Unselect
To 10% write current
50
ns
tD1
Safe to Unsafe
50% WDP to 50% FLT
when a low frequency condition
occurs.
1
us
tD2
Unsafe to Safe
50% WDP to 50% FLT
20
ns
tD3
Head Current Propagation From 50% of WDP to 50% of write
Delay
current, load=short
5
ns
TRSET
MR Bias Current Settling
Time
IMR = 8mA, RMR =66Ω
(Note 8)
1
us
Notes:
1. The differential peak to peak voltage swing could be from 0.4V to 1.5V and the common mode should be such that
for any of the two states the maximum High shall be less than Vcc and the minimum LOW shall be more than 2.4V.
2. In current mode, a ratio of at least 5 sould exist between the HIGH and LOW level currents.
3. Whatever constant power is programmed, the value of the Imr current can not exceed the limits given in the constant
current mode.
4. The input referred noise voltage, excluding the noise of the MR resistor iis defined as follows :
vn²=


v_----n_-A--o_--v-u_----t_
2
–
4
×
k
×
T
×
RMR
1998 July 30
30