TDA5360 Datasheet, PDF (26/34 Pages) NXP Semiconductors – Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads

Philips Semiconductors
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
Objective Specification, Revision 2.2
TDA5360
12 ELECTRICAL PARAMETERS
12.1 DC Characteristics
Unless otherwise specified, recommended operating conditions apply
CS0=CS1=LOW, DRN=HIGH, BFAST=LOW, STWn=HIGH, RIN=18 Ohm, LFP = 1MHz, Imr = 8mA, Rmr = 66 Ohm
Iwr = 30.8mA.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP MAX
UNIT
ICC
V_CC Supply Current
Read Mode, IMR = 8mA
65
75 85
mA
Write Mode, IWR = 30.8 mA 100
130 175
mA
Standby Mode
200
1400 2500
uA
Sleep Mode
200
700 2000
uA
IEE
V_EE Supply Current
Read Mode, IMR = 8mA
-20
-12 -8
mA
Write Mode, IWR = 30.8 mA -150
-80 -60
mA
Standby Mode
-200
-5
0
uA
Sleep Mode
-200
-5
0
uA
Power Dissipation
Read Mode, IMR = 8mA
365
435 525
mW
Pw
(TJ=105°C)
Write Mode IWR = 30.8 mA 800
1050 1625
mW
VIL
Input Low Voltage
TTL
0
0.8
V
VIH
Input High Voltage
TTL
2.4
5
V
IIL
Input Low Current
VIL = 0.8 V
PECL
TTL
-160
50
uA
uA
IIH
Input High Current
VIH = 2.4V
PECL
TTL
50
uA
80
uA
V_OL
Output Low voltage
SDATA IOL = 4mA
0.4
V
V_OH
Output High voltage
SDATA 5V mode
3.6
SDATA 3.3V mode
2.4
Vcc
V
3.6
V
IOH
Output High Current
FLT VOH = 5.0V
50
uA
VOL
Output Low Voltage
FLT IOL = 4mA
0.4
V
High level WDP and WDN
PECL
(Note 1)
Current mode (Note2)
-0.25
Vcc
V
0
mA
Low level WDP and WDN
PECL
(Note 1)
2.4
Current mode (Note 2)
-4
V
-1
mA
|WDP-WDN| PECL swing
Voltage mode selected
peak to peak (Note 1)
0.4
1.5
V
1998 July 30
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