TDA6650TT Datasheet, PDF (25/55 Pages) NXP Semiconductors – 5 V mixer/oscillator and low noise PLL synthesizer for hybrid terrestrial tuner (digital and analog)

Philips Semiconductors
5 V mixer/oscillator and low noise PLL synthesizer
for hybrid terrestrial tuner (digital and analog)
Product specification
TDA6650TT;
TDA6651TT
Notes
1. Important recommendation: to obtain the performances mentioned in this specification, the serial resistance of the
crystal used with this oscillator must never exceed 120 Ω. The crystal oscillator is guaranteed to operate for any
supply voltage between 4.5 V and 5.5 V and at any temperature between −20 °C and +85 °C
2. The drive level is expected with a 50 Ω series resistance of the crystal at series resonance. The drive level will be
different with other series resistance values.
3. The V_XTOUT level is measured when the pin XTOUT is loaded with 5 kΩ in parallel with 10 pF.
4. The RF frequency range is defined by the oscillator frequency range and the intermediate frequency (IF).
5. The 1% cross modulation performance is measured with AGC detector turned off (AGC bits set to 110).
6. Channel SO2 beat is the interfering product of f_RFpix, f_IF and f_osc of channel SO2; f_beat = 37.35 MHz. The possible
mechanisms are: f_osc − 2 × f_IFpix or 2 × f_RFpix − f_osc.
7. The IF output signal stays stable within the range of the step frequency for any RF input level up to 120 dBµV.
8. (N + 5) − 1 MHz pulling is the input level of channel N + 5, at frequency 1 MHz lower, causing 100 kHz FM sidebands
30 dB below the wanted carrier.
9. Limits are related to the tank circuits used in Figs 27 and 28 for digital application or Figs 29 and 30 for hybrid
application. Frequency bands may be adjusted by the choice of external components.
10. The frequency shift is defined as a change in oscillator frequency when the supply voltage varies from
V_CC = 5 to 4.5 V or from V_CC = 5 to 5.25 V. The oscillator is free running during this measurement.
11. The frequency drift is defined as a change in oscillator frequency when the ambient temperature varies from
T_amb = 25 to 50 °C or from T_amb = 25 to 0 °C. The oscillator is free running during this measurement.
12. The supply ripple susceptibility is measured in the measurement circuit according to Figs 27, 28, 29 and 30 using a
spectrum analyser connected to the IF output. An unmodulated RF signal is applied to the test board RF input. A
sinewave signal with a frequency of 500 kHz is superimposed onto the supply voltage. The amplitude of this ripple
signal is adjusted to bring the 500 kHz sidebands around the IF carrier to a level of −53.5 dB with respect to the
carrier.
13. This is the level of divider interferences close to the IF frequency. For example channel S3: f_osc = 158.15 MHz,
1_{⁄4 fosc = 39.5375 MHz. The low and mid band inputs must be left open (i.e. not connected to any load or cable); the}
high band inputs are connected to an hybrid.
14. Crystal oscillator interference means the 4 MHz sidebands caused by the crystal oscillator.
15. The step frequency rejection is the level of step frequency sidebands (e.g. 166.67 kHz) related to the carrier.
16. This is the level of the 9th and 11th harmonics of the 4 MHz crystal oscillator into the IF output.
2004 Mar 22
25