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TDA8004T Datasheet, PDF (15/24 Pages) NXP Semiconductors – IC card interface | |||
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Philips Semiconductors
IC card interface
Product speciï¬cation
TDA8004T
SYMBOL
PARAMETER
CONDITIONS
MIN.
VIH
HIGH-level input voltage on data
lines
0.7VDD
VIL
LOW-level input voltage on data
0
lines
ILIH
input leakage current HIGH on data VIH = VDD
â
lines
IIL
Rpu(int)
tr, tf
LOW-level input on data lines
VIL = 0 V
â
internal pull-up resistance between
9
data lines and VDD
input transition times on data lines from VIL(max) to VIH(min)
â
output transition times on data lines Co = 30 pF; 10% to 90% â
of VDD (see Fig.9)
Internal oscillator
fosc(int)
frequency of internal oscillator
2.2
Reset output to the card (RST)
Vo(inactive)
td(RSTIN-RST)
VOL
VOH
tr, tf
output voltage in inactive mode
delay between pins RSTIN and RST
LOW-level output voltage
HIGH-level output voltage
rise and fall times
no load
Io = 1 mA
RST enabled
IOL = 200 µA
IOH = â200 µA
Co = 250 pF
0
0
â
0
0.9VCC
â
Clock output to the card (CLK)
Vo(inactive) output voltage in inactive mode
VOL
LOW-level output voltage
VOH
HIGH-level output voltage
tr, tf
rise and fall times
δ
duty factor (except for fXTAL)
SR
slew rate (rise and fall)
no load
Io = 1 mA
IOL = 200 µA
IOH = â200 µA
CL = 35 pF; note 2
CL = 35 pF; note 2
CL = 35 pF
0
0
0
0.9VCC
â
45
0.2
Logic inputs (CLKDIV1, CLKDIV2, PRES, PRES, CMDVCC, RSTIN and RFU1); note 3
VIL
LOW-level input voltage
â
VIH
HIGH-level input voltage
0.7VDD
ILIL
input leakage current LOW
0 < VIL < VDD
â
ILIH
input leakage current HIGH
0 < VIH < VDD
â
OFF output (OFF is an open drain with an internal 20 k⦠pull-up resistor to VDD)
VOL
LOW-level output voltage
VOH
HIGH-level output voltage
IOL = 2 mA
IOH = â15 µA
â
0.75VDD
Protections
Tsd
shut-down temperature
â
ICC(sd)
shut-down current at VCC
â
TYP. MAX. UNIT
â
VDD + 0.3 V
â
0.3VDD V
â
10
µA
â
600
µA
11 13
kâ¦
â
1
µs
â
0.1
µs
â
3.2
MHz
â
0.1
V
â
0.3
V
â
2
µs
â
0.3
V
â
VCC
V
â
0.1
µs
â
0.1
â
0.3
â
0.3
â
VCC
â
8
â
55
â
â
V
V
V
V
ns
%
V/ns
â
0.3VDD V
â
â
V
â
5
µA
â
5
µA
â
0.4
V
â
â
V
135 â
°C
â
110
mA
1999 Dec 30
15
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