TDA8004T Datasheet, PDF (13/24 Pages) NXP Semiconductors – IC card interface

Philips Semiconductors
IC card interface
Product specification
TDA8004T
CHARACTERISTICS
V_DD = 3.3 V; V_DDP = 5 V; T_amb = 25 °C; all parameters remain within limits but are only statistically tested for the
temperature range; f_XTAL = 10 MHz; unless otherwise specified; all currents flowing into the IC are positive. When a
parameter is specified as a function of V_DD or V_CC, it means their actual value at the moment of measurement.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Temperature
T_amb
ambient temperature
Supplies
V_DD
V_DDP
supply voltage
supply voltage for the voltage
doubler
V_o(VUP)
output voltage on pin VUP from
step-up converter
V_i(VUP)
input voltage to be applied on VUP
in order to block the step-up
converter
I_DD
supply current
I_P
supply current for the step-up
converter
V_th2
V_hys(th2)
t_W
threshold voltage on V_DD (falling)
hysteresis on V_th2
width of the internal ALARM pulse
Card supply voltage (V_CC); note 1
V_CC
output voltage including ripple
V_{i(ripple)(p-p)} peak-to-peak ripple voltage on V_CC
I_CC
output current
SR
slew rate
−25
2.7
4.5
−
7
inactive mode
−
active mode; f_CLK = f_XTAL; −
C_L = 30 pF
inactive mode
−
active mode; f_CLK = f_XTAL;
C_L = 30 pF
I_CC = 0
−
I_CC = 65 mA
−
2.2
50
6
inactive mode
−0.1
inactive mode; I_CC = 1 mA −0.1
active mode;
I_CC < 65 mA DC
4.75
active mode; single current 4.65
pulse of −100 mA; 2 µs
active mode; current pulses 4.65
of 40 nAs with
I_CC < 200 mA; t < 400 ns;
20 kHz f 200 MHz≤
−
from 0 to 5 V;
−
V_CC short-circuit to ground −
up and down
0.11
−
+85
−
6.5
5
6.5
5.5 −
−
9
−
1.2
−
1.5
−
0.1
−
18
−
150
−
2.4
−
150
−
20
−
+0.1
−
+0.4
−
5.25
−
5.25
−
5.25
−
350
−
65
−
120
0.17 0.22
°C
V
V
V
V
mA
mA
mA
mA
mA
V
mV
ms
V
V
V
V
V
mV
mA
mA
V/µs
1999 Dec 30
13