TDA8586 Datasheet, PDF(13/24 Page) NXP Semiconductors – Power amplifier with load detection and auto BTL/SE selection

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TDA8586 Datasheet, PDF (13/24 Pages) NXP Semiconductors – Power amplifier with load detection and auto BTL/SE selection

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Philips Semiconductors

Power ampliï¬er with load detection and

auto BTL/SE selection

Preliminary speciï¬cation

TDA8586

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

Quad SE application (see Fig.8)

THD

total harmonic distortion

output power

fi = 1 kHz; Po = 1 W; RL = 4 â¦ â

45 Hz < fi < 10 kHz; Po = 1 W; â

RL = 4 â¦; ï¬lter: f < 30 kHz

VP = 14.4 V; RL = 4 â¦; note 2

THD = 0.5%

0.05 0.15 %

0.5

4.5

THD = 10%

voltage gain

Vi(rms) = 15 mV

âGv

channel unbalance

Vi(rms) = 15 mV

â0.7

+0.7 dB

Î±cs

channel separation

Po = 2 W; fi = 1 kHz; RL = 4 â¦ 40

VOO

DC output offset voltage

VP = 14.4 V; on condition

100

VP = 14.4 V; RL = 4 â¦;

mute condition

Vn(o)

noise output voltage on

Rs = 1 kâ¦; VP = 14.4 V; note 3 â

150

ÂµV

Vn(o)(mute) noise output voltage mute

note 3

ÂµV

Vo(mute)

output voltage mute

Vi(rms) = 1 V

500

ÂµV

SVRR

supply voltage ripple rejection Rs = 0 â¦; fi = 1 kHz;

Vripple = 2 V (p-p)

on condition

mute condition

Notes

1. Tolerances on the mute level is tight because of the usage of this pin for integration during load detection.

2. The output power is measured directly on the pins of the IC.

3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.

1999 Apr 08

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