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| TDA8586 Datasheet, PDF (12/24 Pages) NXP Semiconductors – Power amplifier with load detection and auto BTL/SE selection | |||
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Philips Semiconductors
Power ampliï¬er with load detection and
auto BTL/SE selection
Preliminary speciï¬cation
TDA8586
SYMBOL
PARAMETER
CONDITIONS
MIN.
Stereo BTL application (see Fig.7)
THD
Po
total harmonic distortion
output power
fi = 1 kHz; Po = 1 W; RL = 4 â¦
45 Hz < fi < 10 kHz; Po = 1 W;
RL = 4 â¦; ï¬lter: f < 30 kHz
VP = 14.4 V; RL = 4 â¦; note 2
THD = 0.5%
THD = 10%
Gv
voltage gain
Vi(rms) = 15 mV
âGv
channel unbalance
Vi(rms) = 15 mV
αcs
channel separation
Po = 2 W; fi = 1 kHz; RL = 4 â¦
VOO
DC output offset voltage
VP = 14.4 V; on condition
VP = 14.4 V; RL = 4 â¦;
mute condition
Vn(o)
Vn(o)(mute)
Vo(mute)
SVRR
noise output voltage on
noise output voltage mute
Rs = 1 kâ¦; VP = 14.4 V; note 3
note 3
output voltage mute
Vi(rms) = 1 V
supply voltage ripple rejection: Rs = 0 â¦; fi = 1 kHz;
Vripple = 2 V (p-p)
on condition
mute condition
Zi
input impedance
input referenced to ground
â
â
14
17
31
â0.7
45
â
â
â
â
â
45
55
40
TYP.
0.05
0.3
15
21
32
0
55
0
10
100
0
3
55
70
60
MAX. UNIT
0.15 %
â
%
â
W
â
W
33
dB
+0.7 dB
â
dB
100
mV
20
mV
150
µV
20
µV
500
µV
â
dB
â
dB
90
kâ¦
1999 Apr 08
12
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