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TDA8586 Datasheet, PDF (11/24 Pages) NXP Semiconductors – Power amplifier with load detection and auto BTL/SE selection
Philips Semiconductors
Power amplifier with load detection and
auto BTL/SE selection
Preliminary specification
TDA8586
CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; fi = 1 kHz; RL = ∞; measured in test circuit of Fig.8; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supplies
VP
Iq(tot)
Istb
VO
VP(mute)
Vo
VI
operating supply voltage
total quiescent current
standby current
DC output voltage
low supply voltage mute
single-ended and bridge-tied
load output voltage
DC input voltage
SE mode
VP = 14.4 V
VP = 14.4 V; RL = 4 Ω
mute condition
on condition
VP = 14.4 V
8.0
14.4 18
V
−
140
170
mA
−
1
100
µA
−
7.0
−
V
6.0
7.0
8.0
V
−
−
20
mV
−
−
100
mV
−
4.0
−
V
PIN MSO
VMSO
voltage at pin MSO
standby condition
mute condition; note 1
0
−
0.8
V
2.0
3.0
4
V
IMSO
input current
on condition
8.0
−
mute pin at standby condition; −
5
VMSO < 0.8 V
10.5 V
40
µA
Diagnostic; output buffer (open-collector); see Figs 7 to 8
VDIAG(L)
ILI
VDIAG(or)
diagnostic output voltage LOW Isink = 1 mA
leakage current
VDIAG = 14.4 V
diagnostic override voltage in mute mode after load
detection
−
0.3
0.8
V
−
−
1
µA
10.5
−
18
V
VDIAG(4ch) diagnostic 4 channel indication mute, after load detection with −
voltage
4 speakers connected
0.3
0.8
V
CD2
CD10
clip detector LOW
clip detector HIGH
THD mode; VDIAG > 3 V;
R = 10 kΩ
THD mode (default);
VDIAG > 3 V; R = 10 kΩ
0.5
2
7
10
3.5
%
13
%
CLIP DETECT CONTROL PIN
VDDDSEL
IDDDSEL
voltage at DDD select pin to
obtain:
Input current DDD select pin
10% DDD
2% DDD
VDDDSEL = 5 V
0
−
3
−
15
−
1
V
6
V
140
µA
1999 Apr 08
11