Q65110A2486 Datasheet, PDF (5/10 Pages) OSRAM GmbH – NPN-Silizium-Fototransistor im SMT SIDELED®-Gehause Silicon NPN Phototransistor in SMT SIDELED®-Package

Relative Spectral Sensitivity,
SFH 325 S_rel = f ()
100
OHF00207
S_rel ^%
80
70
60
50
40
30
20
10
0
400 500 600 700 800 900 nm 1100
λ
Total Power Dissipation
P_tot = f (T_A)
200
OHF00871
mW
P _tot
160
120
80
40
0
0
20 40 60 80 ˚C 100
T_A
Dark Current
I_CEO = f (T_A), V_CE = 5 V, E = 0
10 ³
OHF01530
Ι
nA
CEO
10 ²
10 ¹
10 ⁰
10
-1
-25
0
25 50 75 ˚C 100
T_A
SFH 325, SFH 325 FA
Relative Spectral Sensitivity,
SFH 325 FA S_rel = f ()
100
OHF00468
S_{rel %}
80
60
40
20
0
400 500 600 700 800 900 nm 1100
λ
Photocurrent
I_PCE = f (V_CE), E_e = Parameter
10 ⁰
mA
Ι _PCE
OHF01529
1 ^mW
cm ²
0.5 ^mW
cm ²
0.25 ^mW
cm ²
10 ^-1
0.1 ^mW
cm ²
Photocurrent
I_PCE = f (E_e), V_CE = 5 V
10 ³
μA
Ι _PCE
10 ²
OHF01924
4
3
10 ¹
2
10 ⁰
10
-1
10
-3
10 ^-2
Dark Current
I_CEO = f (V_CE), E = 0
10 ¹
nA
Ι _CEO
mW/cm ²
10 ⁰
E_e
OHF01527
10 ⁰
10 ^-1
10 ^-2
10 ^-2 _{0 5 10 15 20 25 30 V 35}
V _CE
Capacitance
C_CE = f (V_CE), f = 1 MHz, E = 0
5.0
OHF01528
C _{CE pF}
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10 ^-2
10 ^-1
10 ⁰
10 ¹ V 10 ²
V _CE
10 ^-3 _{0 5 10 15 20 25 30 V 35}
V _CE
Photocurrent
I_PCE/I_PCE25^o = f (T_A), V_CE = 5 V
Ι _PCE ^1.6
OHF01524
Ι _PCE25
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-25 0 25 50 75 C 100
T_A
2013-01-16
5