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SCY99091FCT2G Datasheet, PDF (8/26 Pages) ON Semiconductor – Voltage Detector Series with Programmable Delay
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NCP302, NCP303
Table 1. ELECTRICAL CHARACTERISTIC TABLE FOR 0.9 − 4.9 V
NCP302 Series
Detector Threshold
Detector Threshold
Hysteresis
Supply Current
Vin Low Vin High
Nch Sink Current
Vin Low Vin High
Pch
Source
Current
VDET− (V) (Note 4)
VHYS (V)
Iin (mA) Iin (mA) IOUT (mA) IOUT (mA) IOUT(mA)
(Note 5) (Note 6) (Note 7) (Note 8) (Note 9)
Part Number
Min Typ Max Min Typ Max
Typ
Typ
Typ
Typ
Typ
NCP302LSN09T1
0.882 0.9 0.918 0.027 0.045 0.063 0.20
0.45
0.05
0.5
2.0
NCP302LSN15T1
1.470 1.5 1.530 0.045 0.075 0.105
NCP302LSN18T1
1.764 1.8 1.836 0.054 0.090 0.126 0.23
0.48
NCP302LSN20T1
1.960 2.0 2.040 0.060 0.100 0.140
NCP302LSN27T1
2.646 2.7 2.754 0.081 0.135 0.189 0.25
0.50
NCP302LSN30T1,
2.940 3.0 3.060 0.090 0.150 0.210
NCV302LSN30T1,
2.940 3.0 3.060 0.090 0.150 0.210
NCP302LSN33T1
3.234 3.3 3.366 0.099 0.165 0.231
NCP302LSN38T1
3.724 3.8 3.876 0.114 0.190 0.266
NCP302LSN40T1
3.920 4.0 4.080 0.120 0.200 0.280
3.0
NCP302LSN43T1
4.214 4.3 4.386 0.129 0.215 0.301
NCP302LSN45T1
4.410 4.5 4.590 0.135 0.225 0.315 0.33
0.52
NCP302LSN47T1
4.606 4.7 4.794 0.141 0.235 0.329 0.34
0.53
4. Values shown apply at +25°C only. For voltage options greater than 1.1 V, VDET− limits over operating temperature range (−40°C to +125°C)
are VNOM ±3%. For voltage options < 1.2 V, VDET− is guaranteed only at +25°C.
5. Condition 1: 0.9 — 2.9 V, Vin = VDET− − 0.10 V; 3.0 — 3.9 V, Vin = VDET− − 0.13 V; 4.0 — 4.9 V, Vin = VDET− − 0.16 V
6. Condition 2: 0.9 — 4.9 V, Vin = VDET− + 2.0 V
7. Condition 3: 0.9 — 4.9 V, Vin = 0.7 V, VOUT = 0.05 V, Active Low ‘L’ Suffix Devices
8. Condition 4: 0.9 — 1.0 V, Vin = 0.85 V, VOUT = 0.5 V; 1.1 — 1.5 V, Vin = 1.0 V, VOUT = 0.5 V; 1.6 — 4.9 V, Vin = 1.5 V, VOUT = 0.5 V,
Condition 4: Active Low ‘L’ Suffix Devices
9. Condition 5: 0.9 — 3.9 V, Vin = 4.5 V, VOUT = 2.4 V; 4.0 — 4.9 V, Vin = 8.0 V, VOUT = 5.9 V, Active Low ‘L’ Suffix Devices
Table 2. ELECTRICAL CHARACTERISTIC TABLE FOR 0.9 − 4.9 V
NCP302 Series
Detector Threshold
Detector Threshold
Hysteresis
Supply Current
Vin Low Vin High
Nch Sink
Current
Pch Source Current
Vin Low Vin High
VDET− (V) (Note 10)
VHYS (V)
Iin (mA) Iin (mA) IOUT (mA) IOUT (mA) IOUT (mA)
(Note 11) (Note 12) (Note 13) (Note 14) (Note 15)
Part Number
Min Typ Max Min Typ Max
Typ
Typ
Typ
Typ
Typ
NCP302HSN09T1
0.882 0.9 0.918 0.027 0.045 0.063 0.20
0.45
2.5
0.04
0.08
NCP302HSN18T1
1.764 1.8 1.836 0.054 0.090 0.126 0.23
0.48
NCP302HSN27T1
2.646 2.7 2.754 0.081 0.135 0.189 0.25
0.50
NCP302HSN30T1
2.940 3.0 3.060 0.090 0.150 0.210
NCP302HSN40T1
3.920 4.0 4.080 0.120 0.200 0.280
NCP302HSN45T1
4.410 4.5 4.590 0.135 0.225 0.315 0.33
0.52
10. Values shown apply at +25°C only. For voltage options greater than 1.1 V, VDET− limits over operating temperature range (−40°C to +125°C)
are VNOM ±3%. For voltage options < 1.2 V, VDET− is guaranteed only at +25°C.
11. Condition 1: 0.9 — 2.9 V, Vin = VDET− − 0.10 V; 3.0 — 3.9 V, Vin = VDET− − 0.13 V; 4.0 — 4.9 V, Vin = VDET− − 0.16 V
12. Condition 2: 0.9 — 4.9 V, Vin = VDET− + 2.0 V
13. Condition 3: 0.9 — 1.4 V, Vin = 1.5 V, VOUT = 0.5 V; 1.5 — 4.9 V, Vin = 5.0 V, VOUT = 0.5 V, Active High ‘H’ Suffix Devices
14. Condition 4: 0.9 — 4.9 V, Vin = 0.7 V, VOUT = 0.4 V, Active High ‘H’ Suffix Devices
15. Condition 5: 0.9 — 1.0 V, Vin = 0.8 V, VOUT = GND; 1.1 — 1.5 V, Vin = 1.0 V, VOUT = GND; 1.6 — 4.9 V, Vin = 1.5 V, VOUT = GND,
Active High ‘H’ Suffix Devices
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