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| BUD42D Datasheet, PDF (8/14 Pages) ON Semiconductor – High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability | |||
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BUD42D
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 µF
150 â¦
100 â¦
MTP8P10
3W
3W
100 µF
+10 V
MPF930
MPF930
MTP8P10
MUR105
RB1
Iout
A
VCE
IB1
IB
50 â¦
COMMON
500 µF
âVoff
MJE210
RB2
150 â¦
3W
MTP12N10
1 µF
V(BR)CEO(sus)
L = 10 mH
RB2 = â
VCC = 20 Volts
IC(pk) = 100 mA
VCE PEAK
IC PEAK
IB2
Inductive Switching
L = 200 µH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
RBSOA
L = 500 µH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
0.1 VF
VFRM
tfr
VFR (1.1 VF) UNLESS
OTHERWISE SPECIFIED
10% IF
Figure 27. tfr Measurement
http://onsemi.com
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