BUD42D Datasheet, PDF (7/14 Pages) ON Semiconductor – High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

BUD42D
TYPICAL SWITCHING CHARACTERISTICS
3
I_Bon = I_Boff
V_CC = 15 V
2.5
V_Z = 300 V
L_C = 200 µH
2
1.5
I_B 1 & 2 = 200 mA
50 mA
500 mA
100 mA
1
0
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 23. Inductive Storage Time, t_si
440
420
400
380
360
340
320
300
0
di/dt = 10 A/ms, T_C = 25°C
0.5
1
1.5
2
I_F, FORWARD CURRENT (AMPS)
Figure 24. Forward Recovery Time, t_fr
V_CE
Dyn 1 ms
Dyn 3 ms
0V
90% I_B
1 ms
I_B
3 ms
TIME
Figure 25. Dynamic Saturation Voltage
Measurements
10
I_C
8
6
V_clamp
4
I_B
2
90% I_C
t_si
t_fi
10% V_clamp
10% I_C
t_c
90% I_B1
0
0
2
4
6
8
TIME
Figure 26. Inductive Switching Measurements
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