BUD42D Datasheet, PDF (3/14 Pages) ON Semiconductor – High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

100
T_J = 125°C
T_J = 25°C
10 _{TJ = −20°C}
BUD42D
TYPICAL STATIC CHARACTERISTICS
100
T_J = 125°C
T_J = 25°C
10
T_J = −20°C
1
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ V_CE = 1 V
1
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ V_CE = 5 V
3
T_J = 25°C
2A
2
1.5 A
1A
1
0.4 A
I_C = 0.2 A
0
0.001
0.01
0.1
1
10
I_B, BASE CURRENT (AMPS)
Figure 3. Collector Saturation Region
10
I_C/I_B = 5
1
0.1
T_J = 125°C
T_J = 25°C
T_J = −20°C
0.01
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 4. Collector−Emitter Saturation Voltage
100
I_C/I_B = 8
10
1
0.1
T_J = 125°C
T_J = −20°C
T_J = 25°C
0.01
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 5. Collector−Emitter Saturation Voltage
10
I_C/I_B = 10
1
T_J = −20°C
T_J = 125°C
T_J = 25°C
0.1
0.01
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 6. Collector−Emitter Saturation Voltage
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