BUD42D Datasheet, PDF (6/14 Pages) ON Semiconductor – High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

BUD42D
TYPICAL SWITCHING CHARACTERISTICS
400
I_Bon = I_Boff
V_CC = 15 V
V_Z = 300 V
L_C = 200 µH
300
200
T_J = 125°C
T_J = 25°C
t_c
t_fi
100
0
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 17. Inductive Fall and Cross Over Time,
t_fi and t_c @ h_FE = 5
250
200
T_J = 125°C
150
I_Bon = I_Boff
V_CE = 15 V
V_Z = 300 V
L_C = 200 µH
T_J = 25°C
100
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 18. Inductive Fall Time,
t_fi @ h_FE = 10
500
I_Bon = I_Boff
V_CC = 15 V
400
V_Z = 300 V
L_C = 200 µH
300
T_J = 125°C
T_J = 25°C
5
I_Bon = I_Boff
V_CC = 15 V
V_Z = 300 V
4
L_C = 200 µH
I_C = 1 A
3
2
I_C = 0.3 A
T_J = 125°C
T_J = 25°C
200
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 19. Inductive Cross Over Time,
t_c @ h_FE = 10
1
3 4 5 6 7 8 9 10 11 12
h_FE, FORCED GAIN
Figure 20. Inductive Storage Time, t_si
300
I_Bon = I_Boff
V_CC = 15 V
V_Z = 300 V
L_C = 200 µH
200
I_C = 0.3 A
I_C = 1 A
100
3
T_J = 125°C
T_J = 25°C
4
5
6
7
8
9
10
h_FE, FORCED GAIN
Figure 21. Inductive Fall Time, t_f
300
I_C = 1 A
I_C = 0.3 A
200
100
2
T_J = 125°C
T_J = 25°C
I_Bon = I_Boff
V_CC = 15 V
V_Z = 300 V
L_C = 200 µH
4
6
8
10
h_FE, FORCED GAIN
Figure 22. Inductive Cross Over Time, t_c
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