BUD42D Datasheet, PDF (4/14 Pages) ON Semiconductor – High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

10
I_C/I_B = 5
BUD42D
TYPICAL STATIC CHARACTERISTICS
10
I_C/I_B = 8
1 _{TJ = −20°C}
T_J = 125°C
T_J = 25°C
0.1
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 7. Base−Emitter Saturation Region
1 _{TJ = −20°C}
T_J = 125°C
T_J = 25°C
0.1
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 8. Base−Emitter Saturation Region
10
10
I_C/I_B = 10
1 _{TJ = −20°C}
T_J = 125°C
T_J = 25°C
0.1
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 9. Base−Emitter Saturation Region
1 ^VEC(V) ^{= −20°C}
V_EC(V) = 125°C
V_EC(V) = 25°C
0.1
0.01
0.1
1
10
REVERSE EMITTER−COLLECTOR CURRENT
Figure 10. Forward Diode Voltage
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