SBC846BPDW1T1G Datasheet, PDF (6/17 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS — BC846/SBC846
500
150°C
400
25°C
300
200 ^{−55°C}
100
V_CE = 5 V
0.30
0.25
I_C/I_B = 20
0.20
0.15
0.10
0.05
150°C
25°C
−55°C
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 9. DC Current Gain vs. Collector
Current
1.0
0.9 ^IC^/IB ^{= 20}
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
0
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1
V_CE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 12. Base Emitter Voltage vs. Collector
Current
-2.0
-1.0
-1.6
I_C =
-1.2 ^{-10 mA}
-0.8
-20 mA
-50 mA -100 mA -200 mA
-1.4
-1.8
q_VB for V_BE
-2.2
-55°C to 125°C
-0.4
T_J = 25°C
0
-0.02 -0.05 -0.1
-0.2 -0.5 -1.0 -2.0
I_B, BASE CURRENT (mA)
-5.0 -10 -20
Figure 13. Collector Saturation Region
-2.6
-3.0
-0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
I_C, COLLECTOR CURRENT (mA)
Figure 14. Base−Emitter Temperature Coefficient
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