SBC846BPDW1T1G Datasheet, PDF (3/17 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
ELECTRICAL CHARACTERISTICS (PNP) (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V_(BR)CEO
−65
−45
−30
Collector −Emitter Breakdown Voltage
(I_C = −10 mA, V_EB = 0)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V_(BR)CES
−80
−50
−30
Collector −Base Breakdown Voltage
(I_C = −10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V_(BR)CBO
−80
−50
−30
Emitter −Base Breakdown Voltage
(I_E = −1.0 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V_(BR)EBO
−5.0
−5.0
−5.0
Collector Cutoff Current
(V_CB = −30 V)
(V_CB = −30 V, T_A = 150°C)
ON CHARACTERISTICS
I_CBO
−
−
DC Current Gain
(I_C = −10 mA, V_CE = −5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
(I_C = −2.0 mA, V_CE = −5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
h_FE
−
−
200
420
Collector −Emitter Saturation Voltage
(I_C = −10 mA, I_B = −0.5 mA)
(I_C = −100 mA, I_B = −5.0 mA)
Base −Emitter Saturation Voltage
(I_C = −10 mA, I_B = −0.5 mA)
(I_C = −100 mA, I_B = −5.0 mA)
Base −Emitter On Voltage
(I_C = −2.0 mA, V_CE = −5.0 V)
(I_C = −10 mA, V_CE = −5.0 V)
SMALL− SIGNAL CHARACTERISTICS
V_CE(sat)
V_BE(sat)
V_BE(on)
−
−
−
−
−0.6
−
Current −Gain − Bandwidth Product
(I_C = −10 mA, V_CE = −5.0 Vdc, f = 100 MHz)
f_T
100
Output Capacitance
(V_CB = −10 V, f = 1.0 MHz)
C_ob
−
Noise Figure
NF
(I_C = −0.2 mA, V_CE = −5.0 Vdc, R_S = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
−
Typ
Max
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−15
−
−4.0
150
−
270
−
290
475
520
800
−
−0.3
−
−0.65
−0.7
−
−0.9
−
−
−0.75
−
−0.82
−
−
−
4.5
−
10
Unit
V
V
V
V
nA
mA
−
V
V
V
MHz
pF
dB
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