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SBC846BPDW1T1G Datasheet, PDF (2/17 Pages) ON Semiconductor – Dual General Purpose Transistors
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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation Per Device
FR− 5 Board (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846, SBC846 Series
BC847B, SBC847B Only
BC848 Series
V(BR)CES
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)EBO
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
DC Current Gain
hFE
(IC = 10 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC84B7
BC848C
Collector −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base −Emitter Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
SMALL− SIGNAL CHARACTERISTICS
VCE(sat)
VBE(sat)
VBE(on)
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
fT
Cobo
NF
Symbol
PD
RqJA
TJ, Tstg
Max
380
250
3.0
328
−55 to +150
Unit
mW
mW/°C
mW/°C
°C/W
°C
Min
Typ
Max
Unit
V
65
−
−
45
−
−
30
−
−
V
80
−
−
50
−
−
30
−
−
V
80
−
−
50
−
−
30
−
−
V
6.0
−
−
6.0
−
−
5.0
−
−
−
−
15
nA
−
−
5.0
mA
−
−
150
−
−
270
−
200
290
475
420
520
800
V
−
−
0.25
−
−
0.6
V
−
0.7
−
−
0.9
−
mV
580
660
700
−
−
770
100
−
MHz
−
−
−
4.5
pF
dB
−
−
10
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