SBC846BPDW1T1G Datasheet, PDF (4/17 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC846/SBC846
500
150°C
400
V_CE = 5 V
300 25°C
200 _{−55°C}
100
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
1.1
1.0 I_C/I_B = 20
0.9
0.8 ^{−55°C}
0.7 _25°C
0.6
0.5
0.4 ^150°C
0.3
0.2
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
0.30
0.25
I_C/I_B = 20
0.20
0.15
0.10 ^150°C
25°C
0.05 _{−55°C}
0
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1
V_CE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector
Current
2.0
-1.0
T_A = 25°C
1.6
-1.4
20 mA 50 mA 100 mA
200 mA
1.2
0.8
I_C =
10 mA
-1.8
q_VB for V_BE
-55°C to 125°C
-2.2
0.4
-2.6
0
0.02
0.05 0.1
0.2 0.5 1.0 2.0
I_B, BASE CURRENT (mA)
5.0 10 20
Figure 5. Collector Saturation Region
-3.0
0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 6. Base−Emitter Temperature Coefficient
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