SBC846BPDW1T1G Datasheet, PDF (10/17 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES
500
150°C
400
300 ^25°C
V_CE = 5 V
200 _{−55°C}
100
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 25. DC Current Gain vs. Collector
Current
1.0
0.9 ^IC^/IB ^{= 20}
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
0.35
0.30
I_C/I_B = 20
150°C
0.25
0.20
25°C
0.15
0.10
−55°C
0.05
0
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1
V_CE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 28. Base Emitter Voltage vs. Collector
Current
-2.0
T_A = 25°C
-1.6
-1.2
-0.8
I_C =
-10 mA
-0.4
I_C = -50 mA
I_C = -20 mA
I_C = -200 mA
I_C = -100 mA
0
-0.02
-0.1
-1.0
I_B, BASE CURRENT (mA)
-10 -20
Figure 29. Collector Saturation Region
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-0.2
-1.0
-10
-100
I_C, COLLECTOR CURRENT (mA)
Figure 30. Base−Emitter Temperature
Coefficient
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