SBC846BPDW1T1G Datasheet, PDF (12/17 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC848 SERIES
1000
900
V_CE = 5 V
800 _150°C
700
600
500 25°C
400
300 ^{−55°C}
200
100
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 33. DC Current Gain vs. Collector
Current
1.1
1.0 I_C/I_B = 20
0.9
0.8
0.7
0.6
0.5
−55°C
25°C
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 35. Base Emitter Saturation Voltage vs.
Collector Current
0.30
0.25
I_C/I_B = 20
0.20
0.15
150°C
25°C
0.10
−55°C
0.05
0
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 34. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1
V_CE = 5 V
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 36. Base Emitter Voltage vs. Collector
Current
2.0
T_A = 25°C
1.6
I_C = 200 mA
1.2
I_C = I_C = I_C = 50 mA
I_C = 100 mA
10 mA 20 mA
0.8
0.4
0
0.02
0.1
1.0
I_B, BASE CURRENT (mA)
10 20
Figure 37. Collector Saturation Region
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2
1.0
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 38. Base−Emitter Temperature
Coefficient
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