SBC846BPDW1T1G Datasheet, PDF (16/17 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 _0.01
SINGLE PULSE
0.001
0
1.0
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
Z_qJA(t) = r(t) R_qJA
R_qJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) − T_C = P_(pk) R_qJC(t)
10
100
1.0 k
10 k
t, TIME (ms)
Figure 49. Thermal Response
100 k
1.0 M
-200
1s
3 ms
-100
-50
T_A = 25°C TJ = 25°C
BC558
-10
BC557
BC556
-5.0
-2.0
-1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0 -10
-30 -45 -65 -100
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 50. Active Region Safe Operating Area
The safe operating area curves indicate I_C−V_CE lim-
its of the transistor that must be observed for reliable op-
eration. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
The data of Figure 50 is based upon T_J(pk) = 150°C; T_C
or T_A is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided T_J(pk)
≤ 150°C. T_J(pk) may be calculated from the data in Figure
49. At high case or ambient temperatures, thermal limita-
tions will reduce the power that can be handled to values
less than the limitations imposed by the secondary break-
down.
http://onsemi.com
16