Q32M210 Datasheet, PDF (23/50 Pages) ON Semiconductor – Precision Mixed-Signal 32-bit Microcontroller SPI/SQI interface.

Q32M210
Table 11. WAKEUP I/O PINS (IF5) (Typical operating conditions (Ta = 25°C, Pull−up / Pull−down Enabled, GPIO mode) unless
otherwise noted. • denotes characterized over complete temperature range.)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
DC ELECTRICAL CHARACTERISTICS
IF5 Supply Voltage Range (Note 17) VBATA
1.8
3.6
V
Output Low Level
Output High Level
Input Low Level
Input High Level
Wakeup Threshold (Note 18)
V_ol
I_ol = 4 mA
V_oh
I_ol = −4 mA
V_il
V_ih
For IF5.0, IF5.1
0.7 x VBATA
0.7 x VBATA
0.2 x VBATA
V
V
0.2 x VBATA
V
V
0.2 x VBATA
V
For IF5.2, IF5.3
0.2 x VBATA
Pull−up Resistance
R_pu
VBATA = 1.8 V
VBATA = 3.3 V
102
kW
42
Pull−down Resistance
R_pd
VBATA = 1.8 V
VBATA = 3.3 V
140
kW
34
54
75
Pin Capacitance
C_p
Maximum current
5
pF
±4
mA
17. IF5 Wakeup pins are powered from VBATA
18. Wakeup condition for IF5.0, IF5.1 is falling edge. Wakeup condition for IF5.2, IF5.3 is rising edge. Specified threshold indicates the maximum
and minimum levels for the falling and rising edge final voltages, respectively
Table 12. USB I/O (USBD+, USBD−) (Typical operating conditions (Ta = 25°C, Full−speed Mode, VDDUSB = 3.3 V) unless
otherwise noted. • denotes over complete temperature.)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
DC & AC ELECTRICAL CHARACTERISTICS
USB Supply Voltage
VDDUSB
3.0
3.6
V
Supply Current
Standby
0.5
mA
Operating
450
Output Low Level
V_ol
Output High Level
V_oh
Input Low Level
V_il
Input High Level
V_ih
External Pull−up Resistance
(Note 19)
2.8
2.0
1.425
0.3
V
V
0.8
V
V
1.575
kW
Termination voltage for Pull−up
3.0
3.6
V
Slew Rate (Note 19)
T_fr
Rise time, C_l = 50 pF
4
T_ff
Fall time, C_l = 50 pF
4
Slew Rate Matching
T_frff
T_frff = T_fr/T_ff
90
Pin Capacitance
C_p
19. External pull−up to 3.3 V is required on D+ to enumerate as a USB 2.0 Full−speed device
20
ns
20
111
%
20
pF
http://onsemi.com
23