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AMIS-30623 Datasheet, PDF (10/65 Pages) AMI SEMICONDUCTOR – LIN Microstepping Motordriver
AMIS-30623
11.0 Typical Application
VBAT
Connect
to VBAT
or GND
LIN bus
C8
100 nF
C7
100 μF
220 nF C6
C3
CPN C5 CPP VCP VBB
VDD 9
10
11 12
3
1 μF C9
HW0
1
1 kΩ
C1
2,7 nF
VDR 27V
HW1 2
HW2 8
AMIS-30623
LIN 6
5
4
7
14
TST
GND
C4 100 nF
VBB
19
1 kΩ
20
SWI C2
18 MOTXP
2,7 nF
16 MOTXN
M
MOTYP
15
MOTYN
13
17
PC20051118.1
Figure 7: Typical Application Diagram
Notes:
(1) All resistors are ± 5%, ¼ W
(2) C1, C2 minimum value is 2.7nF, maximum value is 10nF
(3) Depending on the application, the ESR value and working voltage of C7 must be carefully chosen
(4) C3 and C4 must be close to pins VBB and GND
(5) C5 and C6 must be as close as possible to pins CPN, CPP, VCP, and VBB to reduce EMC radiation
(6) C9 must be a ceramic capacitor to assure low ESR
12.0 Positioning Parameters
12.1 Stepping Modes
One of four possible stepping modes can be programmed:
• Half-stepping
• 1/4 micro-stepping
• 1/8 micro-stepping
• 1/16 micro-stepping
Connect
to VBAT
or GND
Rev. 4 | Page 10 of 65 | www.onsemi.com