PMEG3010EP115 Datasheet, PDF (9/13 Pages) NXP Semiconductors – Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.

NXP Semiconductors
8. Test information
PMEG3010EP
1 A low V_F MEGA Schottky barrier rectifier
P
t₂
duty cycle δ =
t₁
t₂
t₁
Fig 13. Duty cycle definition
t
006aaa812
The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are
calculated according to the equations: I_{F(AV )} = I _M × δ with I_M defined as peak current,
I _RMS = I_{F(AV )} at DC, and I _RMS = I _M × δ with I_RMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
2.7
2.3
1
1.1
0.9
0.6
0.3
5.0 4.0
4.4 3.6
Dimensions in mm
2
1.9
1.6
Fig 14. Package outline SOD128
0.22
0.10
07-09-12
PMEG3010EP_1
Product data sheet
Rev. 01 — 30 December 2008
© NXP B.V. 2009. All rights reserved.
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