PMEG3010EP115 Datasheet, PDF(1/13 Page) NXP Semiconductors – Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.

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PMEG3010EP115 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.

PMEG3010EP

1 A low VF MEGA Schottky barrier rectiï¬er

Rev. 01 â 30 December 2008

Product data sheet

1. Product proï¬le

1.1 General description

Planar Maximum Efï¬ciency General Application (MEGA) Schottky barrier rectiï¬er with an

integrated guard ring for stress protection, encapsulated in a SOD128 small and ï¬at lead

Surface-Mounted Device (SMD) plastic package.

1.2 Features

I Average forward current: IF(AV) â¤ 1 A

I Reverse voltage: VR â¤ 30 V

I Low forward voltage

I High power capability due to clip-bond technology

I AEC-Q101 qualiï¬ed

I Small and ï¬at lead SMD plastic package

1.3 Applications

I Low voltage rectiï¬cation

I High efï¬ciency DC-to-DC conversion

I Switch Mode Power Supply (SMPS)

I Reverse polarity protection

I Low power consumption applications

1.4 Quick reference data

Table 1. Quick reference data

Tj = 25 Â°C unless otherwise speciï¬ed.

Symbol Parameter

Conditions

Min Typ Max

IF(AV)

average forward current

square wave;

Î´ = 0.5;

f = 20 kHz

Tamb â¤ 130 Â°C [1] -

-

1

Tsp â¤ 145 Â°C

-

-

1

VR

reverse voltage

-

-

30

VF

forward voltage

IR

reverse current

IF = 1 A

VR = 30 V

-

320 360

-

0.6 1.5

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

Unit

A

A

V

mV

mA

▷