PMEG3010EP115 Datasheet, PDF (2/13 Pages) NXP Semiconductors – Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.

NXP Semiconductors
PMEG3010EP
1 A low V_F MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
3. Ordering information
Simplified outline
[1]
1
2
Graphic symbol
1
2
sym001
Table 3. Ordering information
Type number
Package
Name
Description
PMEG3010EP
-
plastic surface-mounted package; 2 leads
Version
SOD128
4. Marking
Table 4. Marking codes
Type number
PMEG3010EP
Marking code
A1
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
V_R
reverse voltage
T_j = 25 °C
-
I_F(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
I_FSM
P_tot
non-repetitive peak
forward current
total power dissipation
T_amb ≤ 130 °C
T_sp ≤ 145 °C
square wave;
t_p = 8 ms
T_amb ≤ 25 °C
[1] _-
-
[2] _-
[3][4] _-
[3][5] _-
[3][1] _-
Max Unit
30
V
1
A
1
A
50
A
625
mW
1050 mW
2100 mW
PMEG3010EP_1
Product data sheet
Rev. 01 — 30 December 2008
© NXP B.V. 2009. All rights reserved.
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