PMEG3010EP115 Datasheet, PDF (6/13 Pages) NXP Semiconductors – Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.

NXP Semiconductors
PMEG3010EP
1 A low V_F MEGA Schottky barrier rectifier
10
I_F
(1)
(A)
(2)
1
10^−1
(3) (4) (5)
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10^−2
10^−3
10^−4
0
0.2
0.4
0.6
0.8
V_F (V)
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 85 °C
(4) T_j = 25 °C
(5) T_j = −40 °C
Fig 4. Forward current as a function of forward
voltage; typical values
300
C_d
(pF)
200
1
I_R
(A)
10^−1
10^−2
10^−3
10^−4
10^−5
10^−6
10^−7
0
(1)
(2)
(3)
(4)
10
(1) T_j = 125 °C
(2) T_j = 85 °C
(3) T_j = 25 °C
(4) T_j = −40 °C
006aab300
20
30
V_R (V)
Fig 5. Reverse current as a function of reverse
voltage; typical values
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100
0
0
10
20
30
V_R (V)
f = 1 MHz; T_amb = 25 °C
Fig 6. Diode capacitance as a function of reverse voltage; typical values
PMEG3010EP_1
Product data sheet
Rev. 01 — 30 December 2008
© NXP B.V. 2009. All rights reserved.
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