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PMEG3010EP115 Datasheet, PDF (4/13 Pages) NXP Semiconductors – Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.
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NXP Semiconductors
PMEG3010EP
1 A low VF MEGA Schottky barrier rectifier
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
1
0
006aab296
10−1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
1
duty cycle =
1
0.75
0.5
0.25 0.33
0.2
0.1
0.05
0.02 0.01
0
006aab297
10−1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3010EP_1
Product data sheet
Rev. 01 — 30 December 2008
© NXP B.V. 2009. All rights reserved.
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