PMEG3010EP115 Datasheet, PDF (7/13 Pages) NXP Semiconductors – Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.

NXP Semiconductors
PMEG3010EP
1 A low V_F MEGA Schottky barrier rectifier
0.4
P_F(AV)
(W)
0.3
0.2
006aab302
(1)
(2)
(4)
(3)
0.1
0
0
0.5
1
1.5
I_F(AV) (A)
T_j = 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig 7.
Average forward power dissipation as a
function of average forward current; typical
values
1.6
I_F(AV)
(1)
(A)
1.2
(2)
006aab304
0.8
(3)
(4)
0.4
3.5
PR(AV)
(W)
3
006aab303
2.5
2
(1)
(2)
(3)
1.5
(4)
1
0.5
0
0
10
20
30
VR (V)
T_j = 125 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig 8. Average reverse power dissipation as a
function of reverse voltage; typical values
1.6
I_F(AV)
(1)
(A)
1.2
(2)
0.8
(3)
(4)
0.4
006aab305
0
0 25 50 75 100 125 150 175
T_amb (°C)
FR4 PCB, standard footprint
T_j = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values
0
0 25 50 75 100 125 150 175
T_amb (°C)
FR4 PCB, mounting pad for cathode 1 cm²
T_j = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 10. Average forward current as a function of
ambient temperature; typical values
PMEG3010EP_1
Product data sheet
Rev. 01 — 30 December 2008
© NXP B.V. 2009. All rights reserved.
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