PHPT60606PY Datasheet, PDF (9/15 Pages) NXP Semiconductors – 60 V, 6 A PNP high power bipolar transistor

NXP Semiconductors
PHPT60606PY
60 V, 6 A PNP high power bipolar transistor
11. Test information
- I_B
90 %
10 %
- I_C
90 %
- I_Bon (100 %)
input pulse
(idealized waveform)
- I_Boff
output pulse
(idealized waveform)
- I_C (100 %)
10 %
t_d
t_r
t _on
Fig. 12. BISS transistor switching time definition
V_BB
V_CC
t_s
t _off
t
t_f
006aaa266
oscilloscope ^(probe)
450 Ω
V_I
R_B
R2
R1
Fig. 13. Test circuit for switching times
R_C
V_{o (probe)}
oscilloscope
450 Ω
DUT
mgd624
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PHPT60606PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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