PHPT60606PY Datasheet, PDF (1/15 Pages) NXP Semiconductors – 60 V, 6 A PNP high power bipolar transistor

PHPT60606PY
60 V, 6 A PNP high power bipolar transistor
9 December 2014
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
NPN complement: PHPT60606NY.
2. Features and benefits
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications
• Motor drive
• Relay replacement
4. Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current
collector-emitter
saturation resistance
t_p ≤ 1 ms; pulsed
I_C = -6 A; I_B = -600 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02; T_amb = 25 °C
Min Typ Max Unit
-
-
-60 V
-
-
-6
A
-
-
-12 A
-
66
88
mΩ
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