PHPT60606PY Datasheet, PDF (8/15 Pages) NXP Semiconductors – 60 V, 6 A PNP high power bipolar transistor

NXP Semiconductors
PHPT60606PY
60 V, 6 A PNP high power bipolar transistor
10³
R_CEsat
(Ω)
10²
aaa-014833
10
1
(1)
10^-1
(2)
(3)
10^-2
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
10³
R_CEsat
(Ω)
10²
10
1
aaa-014834
(1)
(2)
(3)
(4)
10^-1
10^-2
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 20
(4) I_C/I_B = 10
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PHPT60606PY
Product data sheet
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9 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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