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| PHPT60606PY Datasheet, PDF (5/15 Pages) NXP Semiconductors – 60 V, 6 A PNP high power bipolar transistor | |||
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NXP Semiconductors
102
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
10
0.33
0.2
0.1
0.05
0.02
1
0.01
0
PHPT60606PY
60 V, 6 A PNP high power bipolar transistor
aaa-014787
10-1
10-5
10-4
10-3
10-2
10-1
1
FR4 PCB, mounting pad for collector 6 cm2
10
102
103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
ICBO
collector-base cut-off VCB = -48 V; IE = 0 A; Tamb = 25 °C
current
VCB = -48 V; IE = 0 A; Tj = 150 °C
ICES
collector-emitter cut-off VCE = -48 V; VBE = 0 V; Tamb = 25 °C
current
IEBO
emitter-base cut-off
VEB = -8 V; IC = 0 A; Tamb = 25 °C
current
hFE
DC current gain
VCE = -2 V; IC = -500 mA; Tamb = 25 °C
VCE = -2 V; IC = -1 A; tp ⤠300 µs;
δ ⤠0.02; Tamb = 25 °C; pulsed
VCE = -2 V; IC = -3 A; tp ⤠300 µs;
δ ⤠0.02; Tamb = 25 °C; pulsed
VCE = -2 V; IC = -6 A; pulsed;
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = -1 A; IB = -50 mA; tp ⤠300 µs;
δ ⤠0.02; Tamb = 25 °C
IC = -3 A; IB = -300 mA; tp ⤠300 µs;
δ ⤠0.02; Tamb = 25 °C; pulsed
IC = -6 A; IB = -600 mA; pulsed;
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
RCEsat
collector-emitter
saturation resistance
IC = -6 A; IB = -600 mA; pulsed;
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
PHPT60606PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 December 2014
Min Typ Max Unit
-
-
-100 nA
-
-
-50 µA
-
-
-100 nA
-
-
-100 nA
120 200 -
110 180 -
60
100 -
20
30
-
-
-75 -110 mV
-
-155 -230 mV
-
-395 -525 mV
-
66
88
mΩ
© NXP Semiconductors N.V. 2014. All rights reserved
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