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| PHPT60606PY Datasheet, PDF (6/15 Pages) NXP Semiconductors – 60 V, 6 A PNP high power bipolar transistor | |||
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NXP Semiconductors
PHPT60606PY
60 V, 6 A PNP high power bipolar transistor
Symbol
VBEsat
VBEon
td
tr
ton
ts
tf
toff
fT
Cc
Parameter
Conditions
base-emitter saturation IC = -1 A; IB = -50 mA; pulsed;
voltage
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
IC = -3 A; IB = -300 mA; pulsed;
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
IC = -6 A; IB = -600 mA; pulsed;
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
base-emitter turn-on
voltage
VCE = -2 V; IC = -0.5 A; Tamb = 25 °C
delay time
rise time
turn-on time
VCC = -12.5 V; IC = -3 A;
IBon = -150 mA; IBoff = 150 mA;
Tamb = 25 °C
storage time
fall time
turn-off time
transition frequency
VCE = -10 V; IC = -500 mA;
f = 100 MHz; Tamb = 25 °C
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
Min Typ Max Unit
-
-0.85 -0.95 V
-
-1
-1.1 V
-
-1.1 -1.3 V
-
-0.75 -0.85 V
-
15
-
ns
-
110 -
ns
-
125 -
ns
-
185 -
ns
-
70
-
ns
-
255 -
ns
-
110 -
MHz
-
57
-
pF
500
hFE
400
(1)
300
(2)
200
100
(3)
aaa-014827
0
-10-1
-1
-10
-102
-103
-104
IC (mA)
VCE = â2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
-8
IC
(A)
-6
IB = -215 mA
-185
-155
-125
-4
-2
aaa-014828
-95
-65
-45
-30
-15
-5
0
0
-1
-2
-3
-4
-5
VCE (V)
Tamb = 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
PHPT60606PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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