PHPT60606PY Datasheet, PDF (3/15 Pages) NXP Semiconductors – 60 V, 6 A PNP high power bipolar transistor

NXP Semiconductors
PHPT60606PY
60 V, 6 A PNP high power bipolar transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_CBO
collector-base voltage
open emitter
V_CEO
collector-emitter voltage
open base
V_EBO
emitter-base voltage
open collector
I_C
collector current
I_CM
peak collector current
t_p ≤ 1 ms; pulsed
I_B
base current
I_BM
peak base current
t_p ≤ 1 ms; pulsed
P_tot
total power dissipation
T_amb ≤ 25 °C
T_j
T_amb
T_stg
junction temperature
ambient temperature
storage temperature
Min Max Unit
-
-60 V
-
-60 V
-
-8
V
-
-6
A
-
-12 A
-
-800 mA
-
-1.2 A
[1]
-
[2]
-
1.35 W
3.25 W
[3]
-
5
W
[4]
-
25
W
-
175 °C
-55 175 °C
-65 175 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm}²_.
[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[4] Power dissipation from junction to mounting base.
6
P_tot
(1)
(W)
aaa-014785
4
(2)
2
(3)
0
-75
25
(1) Ceramic PCB, Al₂O₃, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm²
(3) FR4 PCB, standard footprint
125
225
T_amb (°C)
Fig. 1. Power derating curves
PHPT60606PY
All information provided in this document is subject to legal disclaimers.
Product data sheet
9 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
3 / 15