PHPT60606PY Datasheet, PDF (4/15 Pages) NXP Semiconductors – 60 V, 6 A PNP high power bipolar transistor

NXP Semiconductors
PHPT60606PY
60 V, 6 A PNP high power bipolar transistor
9. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
R_th(j-mb)
thermal resistance
from junction to
mounting base
Min Typ Max Unit
[1]
-
-
111 K/W
[2]
-
-
46
K/W
[3]
-
-
30
K/W
-
-
6
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm}²_.
[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
10³
Z_th(j-a)
(K/W)
10²
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02 _0.01
1
0
aaa-014786
10^-1
10^-5
10^-4
10^-3
10^-2
10^-1
1
FR4 PCB, standard footprint
10
10²
10³
t_p (s)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PHPT60606PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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