GTL2010 Datasheet, PDF (9/20 Pages) NXP Semiconductors – 10-bit GTL Processor Voltage Clamp

NXP Semiconductors
GTL2010
10-bit bidirectional low voltage translator
11. Static characteristics
Table 9. Static characteristics
T_amb = −40 °C to +85 °C, unless otherwise specified.
Symbol Parameter
Conditions
V_OL
V_IK
I_LI(G)
C_ig
C_io(off)
LOW-level output voltage V_CC = 3.0 V; V_SREF = 1.365 V;
V_Sn or V_Dn = 0.175 V; I_clamp = 15.2 mA
input clamping voltage
I_I = −18 mA; V_GREF = 0 V
gate input leakage current V_I = 5 V; V_GREF = 0 V
input capacitance at gate V_I = 3 V or 0 V
off-state input/output
capacitance
V_O = 3 V or 0 V; V_GREF = 0 V
C_io(on)
on-state input/output
capacitance
V_O = 3 V or 0 V; V_GREF = 3 V
R_on
ON-state resistance
V_I = 0 V; I_O = 64 mA
V_GREF = 4.5 V
V_GREF = 3 V
V_GREF = 2.3 V
V_GREF = 1.5 V
V_I = 0 V; I_O = 30 mA; V_GREF = 1.5 V
V_I = 2.4 V; I_O = 15 mA; V_GREF = 4.5 V
V_I = 2.4 V; I_O = 15 mA; V_GREF = 3 V
V_I = 1.7 V; I_O = 15 mA; V_GREF = 2.3 V
Min
-
-
-
-
-
-
[2]
-
-
-
-
[2] _-
[2] _-
[2] _-
[2] _-
Typ^[1] Max
260 350
Unit
mV
-
−1.2 V
-
5
µA
56
-
pF
7.4
-
pF
18.6 -
pF
3.5
5
Ω
4.4
7
Ω
5.5
9
Ω
67
115 Ω
9
15
Ω
7
10
Ω
58
80
Ω
50
70
Ω
[1] All typical values are measured at T_amb = 25 °C.
[2] Measured by the voltage drop between the Sn and the Dn terminals at the indicated current through the switch. ON-state resistance is
determined by the lowest voltage of the two (Sn or Dn) terminals.
GTL2010_6
Product data sheet
Rev. 06 — 3 March 2008
© NXP B.V. 2008. All rights reserved.
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