PSMN1R6-40YLC Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN1R6-40YLC
N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using
NextPower technology
10^-1
I_D
(A)
10^-2
10^-3
003aag982
Min Typ Max
3
V_GS(th)
(V)
Max (1mA)
2
003aag983
I_D = 5mA
1mA
10^-4
1 Min (5mA)
10^-5
10^-6
0
1
2
3
V _GS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
-60
0
60
120
180
T_j (°C)
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
5
003aag984
2
R_DSon
V_GS (V) = 2.4
a
(mΩ)
4
1.5
2.6
3
1
003aag985
2.8
2
3
3.5
4.5
10
1
10
30
50
70
90
110
I_D (A)
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
0.5
0
-60
0
60
120
180
T_j (°C)
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN1R6-40YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 August 2012
© NXP B.V. 2012. All rights reserved
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