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| PSMN1R6-40YLC Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology | |||
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NXP Semiconductors
PSMN1R6-40YLC
N-channel 40 V 1.55 m⦠logic level MOSFET in LFPAK using
NextPower technology
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
10-2 0.02
003aag977
P
δ=
tp
T
single shot
tp
t
10-3
10-6
10-5
10-4
10-3
10-2
T
10-1
tp (s)
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 10; Fig. 11
ID = 10 mA; VDS = VGS; Tj = 150 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C
IDSS
drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 40 V; VGS = 0 V; Tj = 150 °C
IGSS
gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 4.5 V; ID = 25 A; Tj = 150 °C;
Fig. 12; Fig. 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 150 °C;
Fig. 12; Fig. 13
RG
gate resistance
f = 1 MHz
Min Typ Max Unit
40
-
-
V
36
-
-
V
1.05 1.46 1.95 V
0.5 -
-
V
-
-
2.25 V
-
-
1
µA
-
-
100 µA
-
-
100 nA
-
-
100 nA
-
1.45 1.8 mΩ
-
-
3.2 mΩ
-
1.25 1.55 mΩ
-
-
2.7 mΩ
-
1.17 2.34 Ω
PSMN1R6-40YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 August 2012
© NXP B.V. 2012. All rights reserved
5 / 14
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