PSMN1R6-40YLC Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
100
I_D
(A)
4.5
10
80
3 2.8
2.6
60
PSMN1R6-40YLC
N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using
NextPower technology
003aag978
10
R_DSon
(mΩ)
8
003aag979
2.4
6
40
4
20
2
V_GS (V) = 2.2
0
0
0.25
0.5
0.75
1
V_DS(V)
0
0
4
8
12
16
V_GS(V)
Fig. 6. Output characteristics; drain current as a
Fig. 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
360
g_fs
(S)
300
003aag980
240
180
120
60
0
0
20
40
60
80
100
I_D (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
100
I_D
(A)
80
003aag981
60
40
20
T_j = 150 °C
T_j = 25 °C
0
0
1
2
3
4
V_GS(V)
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN1R6-40YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 August 2012
© NXP B.V. 2012. All rights reserved
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