PSMN1R6-40YLC Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN1R6-40YLC
N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using
NextPower technology
Symbol
Q_G(tot)
Parameter
total gate charge
Conditions
V_GS = 4.5 V; I_D = 25 A; V_DS = 20 V;
Fig. 14
Min Typ Max Unit
-
59
-
nC
[1] Continuous current is limited by package.
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
S
source
2
S
source
3
S
source
4
G
gate
mb
D
mounting base; connected to
drain
1234
LFPAK; Power-
SO8 (SOT1023)
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN1R6-40YLC
LFPAK;
Power-SO8
Description
Version
Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT1023
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
25 °C ≤ T_j ≤ 150 °C
V_DGR
drain-gate voltage
25 °C ≤ T_j ≤ 150 °C; R_GS = 20 kΩ
V_GS
gate-source voltage
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 1
[1]
V_GS = 10 V; T_mb = 100 °C; Fig. 1
[1]
I_DM
peak drain current
pulsed; t_p ≤ 10 µs; T_mb = 25 °C; Fig. 4
P_tot
total power dissipation
T_mb = 25 °C; Fig. 2
T_stg
storage temperature
PSMN1R6-40YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 August 2012
Min Max Unit
-
40
V
-
40
V
-20 20
V
-
100 A
-
100 A
-
1304 A
-
288 W
-55 150 °C
© NXP B.V. 2012. All rights reserved
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