PSMN1R6-40YLC Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology

PSMN1R6-40YLC
N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using
NextPower technology
22 August 2012
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
• High reliability Power SO8 package, qualified to 150°C
• Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
• Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
• Ultra low Rdson and low parasitic inductance
1.3 Applications
• DC-to-DC converters
• Load switching
• Power OR-ing
• Server power supplies
• Sync rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage 25 °C ≤ T_j ≤ 150 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; Fig. 1
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state V_GS = 4.5 V; I_D = 25 A; T_j = 25 °C;
resistance
Fig. 12
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
Fig. 12
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 4.5 V; I_D = 25 A; V_DS = 20 V;
Fig. 14
Min Typ Max Unit
-
-
40
V
[1]
-
-
100 A
-
-
288 W
-55 -
150 °C
-
1.45 1.8 mΩ
-
1.25 1.55 mΩ
-
15.3 -
nC
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