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PSMN1R6-40YLC Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology
NXP Semiconductors
103
IAL
(A)
102
10
PSMN1R6-40YLC
N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using
NextPower technology
003aag975
(1)
(2)
1
10-3
10-2
10-1
1
10
tAL(ms)
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
104
ID
(A)
103
102
10
1
Limit RDSon = VDS / ID
DC
003aag976
tp =10 µ s
100 µs
1 ms
10 ms
100 ms
10-1
10-1
1
10
102
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min Typ Max Unit
-
0.35 0.43 K/W
PSMN1R6-40YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 August 2012
© NXP B.V. 2012. All rights reserved
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