PSMN013-100ES Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN013-100ES
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
3.2
a
2.4
003aad774
1.6
0.8
0
-60
0
60
120
180
T_j (°C)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
30
R_DSon
(mΩ)
V_GS (V) = 4.5
25
003aad578
20
15
5
6
10
20
10
0
20
40
60
80
I_D (A)
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
VGS
(V)
8
6
003aad583
VDS = 50V
4
2
0
0
15
30
45
60
QG (nC)
Fig 12. Drain-source on-state resistance as a function Fig 13. Gate-source voltage as a function of gate
of drain current; typical values
charge; typical values
PSMN013-100ES_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 February 2010
© NXP B.V. 2010. All rights reserved.
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