PSMN013-100ES Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN013-100ES
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
45
RDS on
(mΩ)
35
003aad585
25
15
5
4
8
12
16
20
VGS (V)
150
gfs
(S )
120
003aad586
90
60
30
0
0
30
60
90
120 150
ID (A)
Fig 6. Drain-source on-state resistance as a function Fig 7. Forward transconductance as a function of
of gate-source voltage; typical values
drain current; typical values
100
ID
(A)
80
003aad582
5
V_GS(th)
(V)
4
003aad280
max
60
Tj = 175 °C
40
25 °C
20
3
typ
2
min
1
0
0
2
4
6
VGS (V)
0
−60
0
60
120
180
T_j (°C)
Fig 8. Transfer characteristics: drain current as a
Fig 9. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
PSMN013-100ES_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 February 2010
© NXP B.V. 2010. All rights reserved.
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